| PART |
Description |
Maker |
| MB85R256HPF MB85R256HPFTN MB85R256HPFCN |
Memory FRAM CMOS 256 K (32 K ? 8) Bit
Memory FRAM CMOS 256 K (32 K × 8) Bit
|
Fujitsu Component Limited.
|
| MB85RS256 MB85RS256PNF-G-JN-ERE1 MB85RS256PNF-G-JN |
Memory FRAM CMOS 256 K (32 K ? 8) Bit SPI
Memory FRAM CMOS 256 K (32 K × 8) Bit SPI
|
Fujitsu Component Limited.
http://
|
| MB85R1002 MB85R1002BGT-GE1 MB85R1002PFTN-GE1 MB85R |
Memory FRAM CMOS 1 M Bit (64 K × 16)
Memory FRAM CMOS 1 M Bit (64 K 隆驴 16)
Memory FRAM CMOS 1 M Bit (64 K 】 16)
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MB85R2002 MB85R2002PFTN-GE1 |
Memory FRAM CMOS 2 M Bit (128 K × 16)
Memory FRAM CMOS 2 M Bit (128 K 】 16)
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| AM7200-35RC AM7200-35JC AM7200-35PC AM7200-50JC AM |
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY 256 X 9 OTHER FIFO, 25 ns, PDIP28
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY 256 X 9 OTHER FIFO, 50 ns, PDIP28
Circular Connector; No. of Contacts:13; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
JT 13C 13#22D PIN WALL RECP
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| AM29LV002B-150FCB AM29LV002B-90RFCB AM29LV002B-150 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 150 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
|
Advanced Micro Devices, Inc.
|
| AM29F400BT-90FC AM29F400BT-90EIB AM29F400BT-90SE |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
| 28F256 AM28F256-150FCB AM28F256-120FE AM28F256-120 |
Octal bus transceivers 20-SOIC 0 to 70
Serial-out shift registers with input latches 16-SOIC 0 to 70
Octal bus transceivers 20-PDIP 0 to 70
Serial-out shift registers with input latches 16-PDIP 0 to 70
Voltage-controlled oscillator 14-SOIC 0 to 70
Serial-out shift registers with input latches 16-SO 0 to 70
Shift registers with input latches 20-SOIC 0 to 70
Dual voltage-controlled oscillators 16-SOIC 0 to 70
Dual voltage-controlled oscillators 16-PDIP 0 to 70
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PQCC32
Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 200 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDIP32
Octal bus transceivers with open collector outputs 20-SOIC 0 to 70
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F400BB-55FEB AM29F400BB-55FIB AM29F400BT-55FCB |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
http://
|
| S29CD032G S29CD032G0JFAI000 S29CD032G0JFAI002 S29C |
CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
From old datasheet system
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
SPANSION[SPANSION]
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